Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance
نویسندگان
چکیده
منابع مشابه
Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance
The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50 nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area. In this paper, a low overlap capacitance, surround gate, vertical MOSFET technology is presented. A new process that uses spacer or fillet local oxidation is develope...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2004
ISSN: 0038-1101
DOI: 10.1016/j.sse.2003.09.019